maximum ratings (t a =25c) symbol units collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current i c 600 ma power dissipation p d 1.2 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 104 c/w electrical characteristics (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =60v 10 na i cbo v cb =60v, t a =125c 10 a i ebo v eb =3.0v 10 na i cev v ce =60v, v eb =3.0v 10 na bv cbo i c =10 a75v bv ceo i c =10ma 40 v bv ebo i e =10 a 6.0 v v ce(sat) i c =150ma, i b =15ma 0.3 v v ce(sat) i c =500ma, i b =50ma 1.0 v v be(sat) i c =150ma, i b =15ma 0.6 1.2 v v be(sat) i c =500ma, i b =50ma 2.0 v h fe v ce =10v, i c =0.1ma 35 h fe v ce =10v, i c =1.0ma 50 h fe v ce =10v, i c =10ma 75 h fe v ce =10v, i c =150ma 100 300 h fe v ce =1.0v, i c =150ma 50 h fe v ce =10v, i c =500ma 40 f t v ce =20v, i c =20ma, f=100mhz 300 mhz c ob v cb =10v, i e =0, f=1.0mhz 8.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz 25 pf CXT2222A surface mount npn silicon transistor sot-89 case central semiconductor corp. tm r3 ( 19-december 2001) description: the central semiconductor CXT2222A type is an npn silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications.
a c e g f h j k m l b r3 1 3 2 central semiconductor corp. tm sot-89 case - mechanical outline CXT2222A surface mount npn silicon transistor r3 ( 19-december 2001) lead code: 1) emitter 2) collector 3) base electrical characteristics (continued) symbol test conditions min max units h ie v ce =10v, i c =1.0ma, f=1.0khz 2.0 8.0 k ? h ie v ce =10v, i c =10ma, f=1.0khz 0.25 1.25 k ? h re v ce =10v, i c =1.0ma, f=1.0khz 8.0 x10 -4 h re v ce =10v, i c =10ma, f=1.0khz 4.0 x10 -4 h fe v ce =10v, i c =1.0ma, f=1.0khz 50 300 h fe v ce =10v, i c =10ma, f=1.0khz 75 375 h oe v ce =10v, i c =1.0ma, f=1.0khz 5.0 35 mhos h oe v ce =10v, i c =10ma, f=1.0khz 25 200 mhos rb?c c v cb =10v, i e =20ma, f=31.8mhz 150 ps nf v ce =10v, i c =100 a, r s =1.0k ?, f=1.0khz 4.0 db t d v cc =30v, v be =0.5, i c =150ma, i b1 =15ma 10 ns t r v cc =30v, v be =0.5, i c =150ma, i b1 =15ma 25 ns t s v cc =30v, i c =150ma, i b1 =i b2 =15ma 225 ns t f v cc =30v, i c =150ma, i b1 =i b2 =15ma 60 ns bottom view
|
